bby 57-03w aug-03-1998 1 silicon tuning diode ? excellent linearity ? high q hyperabrupt tuning diode ? low series inductance ? high capacitance ratio ? designed for low tuning voltage operation for vco's in mobile communications equipment ? for control elements such as tcxos and vcxos vps05176 1 2 type marking pin configuration package bby 57-03w 5 cathd.red 1 = c 2 = a sod-323 maximum ratings parameter symbol value unit diode reverse voltage v r 10 v ma forward current 20 i f operating temperature range t op -55 ... 150 c storage temperature t st g -55 ... 150
bby 57-03w aug-03-1998 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 8 v i r - - 1 na reverse current v r = 8 v, t a = 65 c i r - - 100 ac characteristics pf diode capacitance v r = 1 v, f = 1 mhz v r = 2.5 v, f = 1 mhz v r = 3 v, f = 1 mhz v r = 4 v, f = 1 mhz 16.5 - - 4 18.6 - - 5.5 17.5 8.7 7.1 4.73 c t - c t1 / c t3 capacitance ratio v r = 1 v, v r = 3 v, f = 1 mhz - 2.45 - - c t1 / c t4 capacitance ratio v r = 1 v, v r = 4 v, f = 1 mhz 3 4.5 3.7 ? series resistance v r = 1 v, f = 470 mhz 0.3 - r s - case capacitance f = 1 mhz c c pf - 0.09 - series inductance l s - nh 1.8 -
bby 57-03w aug-03-1998 3 temperature coefficient of the diode capacitance t cc = f ( v r ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v 4.0 v r -4 10 -3 10 -2 10 -1 10 1/c t cc diode capacitance c t = f ( v r ) f = 1mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v 4.0 v r 0 5 10 15 20 25 30 pf 40 c t normalized diode capacitance c (ta) / c (25c) = f ( t a ) f = 1mhz, v r = parameter -30 -10 10 30 50 70 c 100 t a 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 - 1.05 c ta / c 25c 1v 4v
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